P-Channel MOSFET. P3203EVG Datasheet

P3203EVG MOSFET. Datasheet pdf. Equivalent

Part P3203EVG
Description P-Channel MOSFET
Feature P3203EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 32mΩ @VGS = -1.
Manufacture UNIKC
Datasheet
Download P3203EVG Datasheet

P3203EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P3203EVG Datasheet
Recommendation Recommendation Datasheet P3203EVG Datasheet





P3203EVG
P3203EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
32mΩ @VGS = -10V
ID
-8A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-8
-7
-40
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
25
40
UNITS
°C / W
Ver 1.0
1 2012/4/13



P3203EVG
P3203EVG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
VDS = -5V, VGS = -10V
VGS = -4.5V, ID = -6A
VGS = -10V, ID = -8A
VDS = -10V, ID = -6A
-30
-0.8 -1.5 -2.5
±100
-1
-10
-30
44 55
25.5 32
7
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = -15V, f = 1MHz
890
183
Reverse Transfer Capacitance
Crss
120
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS,
ID = -6A, VGS = -10V
18
2.5
4.5
Turn-On Delay Time2
td(on)
7.7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = -10V, ID @ -1A, VGS = -10V,
RGS = 3Ω
5.7
20
Fall Time2
tf
9.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -1A, VGS = 0V
-2.5
-1
Reverse Recovery Charge
Qrr
10
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
UNIT
V
nA
mA
A
mΩ
S
pF
nC
nS
A
V
nC
Ver 1.0
2 2012/4/13





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)