AP18P10GH. 18P10GH Datasheet

18P10GH AP18P10GH. Datasheet pdf. Equivalent

Part 18P10GH
Description AP18P10GH
Feature Advanced Power Electronics Corp. AP18P10GH/J RoHS-compliant Product P-CHANNEL ENHANCEMENT MODE POWE.
Manufacture Advanced Power Electronics
Datasheet
Download 18P10GH Datasheet

Advanced Power Electronics Corp. AP18P10GH/J RoHS-compliant 18P10GH Datasheet
Recommendation Recommendation Datasheet 18P10GH Datasheet





18P10GH
Advanced Power
Electronics Corp.
AP18P10GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
D
Simple Drive Requirement
Fast Switching Characteristic
G
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18P10GJ) is
available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
BVDSS
RDS(ON)
ID
-100V
180mΩ
-12A
G
D
S
TO-252(H)
G
D
S
Rating
-100
±20
-12
-10
-48
35.7
-55 to 150
-55 to 150
TO-251(J)
Units
V
V
A
A
A
W
Value
3.5
110
Units
/W
/W
Data and specifications subject to change without notice
1
200810162



18P10GH
AP18P10GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=-1mA
VGS=-10V, ID=-8A
VGS=-4.5V, ID=-6A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS= -10V, ID= -8A
Drain-Source Leakage Current
VDS=-80V, VGS=0V
Drain-Source Leakage Current (Tj=150oC) VDS=-80V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= ±20V
ID=-8A
Gate-Source Charge
VDS=-80V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-50V
Rise Time
ID=-8A
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
Fall Time
RD=6.25Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
-100
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
--
- 180
- 210
- -3
8-
- -10
- -25
- ±100
16 25.6
4.4 -
8.7 -
9-
14 -
45 -
40 -
1590 2550
110 -
70 -
8 12
V
m
m
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-12A, VGS=0V
IS=-8A, VGS=0V,
dI/dt=-100A/µs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
Min. Typ. Max. Units
- - -1.3 V
- 49 - ns
- 110 - nC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2





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