NOISE AMPLIFIER. HMC717ALP3E Datasheet

HMC717ALP3E AMPLIFIER. Datasheet pdf. Equivalent

Part HMC717ALP3E
Description GaAs PHEMT MMIC LOW NOISE AMPLIFIER
Feature AMPLIFIER - LOW NOISE - SMT Typical Applications The HMC717ALP3E is ideal for: • Fixed Wireless and.
Manufacture Analog Devices
Datasheet
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AMPLIFIER - LOW NOISE - SMT Typical Applications The HMC717 HMC717ALP3E Datasheet
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HMC717ALP3E
Typical Applications
The HMC717ALP3E is ideal for:
• Fixed Wireless and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Functional Diagram
HMC717ALP3E
v09.0816
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Features
Noise Figure: 1.1 dB
Gain: 14.5 dB
Output IP3: +29.5 dBm
Single Supply: +3V to +5V
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC717ALP3E is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The amplifier
has been optimized to provide 1.1 dB noise figure,
14.5 dB gain and +29.5 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC717ALP3E can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
Electrical Specifications
TA = +25° C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V [1] [2]
Parameter
Vdd = +3V
Min. Typ. Max.
Vdd = +5V
Min. Typ. Max.
Frequency Range
4.8 - 6.0
4.8 - 6.0
Gain
12.5
11.0 14.5
Gain Variation Over Temperature
0.005
0.01
Noise Figure
1.3 1.3 1.8
Input Return Loss
89
Output Return Loss
13 15
Output Power for 1 dB Compression (P1dB)
12
18
Saturated Output Power (Psat)
14.5
19
Output Third Order Intercept (IP3)
23.5
29.5
Total Supply Current (Idd)
31 68 100
[1] Rbias resistor sets current, see application circuit herein
[2] Vdd = Vdd1 = Vdd2
.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc.,
1 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D



HMC717ALP3E
Broadband Gain & Return Loss [1][2]
25
20
15 S21
10
5
S11
0
-5
-10
-15
-20
-25 S22
-30
1 2 3 4 5 6 7 8 9 10
FREQUENCY (GHz)
Vdd=5V
Vdd=3V
Gain vs. Temperature [2]
16
14
12
10
8
6
4
2
0
4.5 4.9 5.3 5.7
FREQUENCY (GHz)
+25C
+85C
6.1 6.5
-40C
Output Return Loss vs. Temperature [1]
0
-5
-10
-15
-20
-25
4.5
4.9 5.3 5.7 6.1
FREQUENCY (GHz)
6.5
+25C
+85C
-40C
HMC717ALP3E
v09.0816
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Gain vs. Temperature [1]
19
17
15
13
11
9
7
5
3
1
4.5
4.9 5.3 5.7
FREQUENCY (GHz)
+25C
+85C
6.1 6.5
-40C
Input Return Loss vs. Temperature [1]
0
-5
-10
-15
-20
4.5
4.9 5.3 5.7 6.1
FREQUENCY (GHz)
6.5
+25C
+85C
-40C
Reverse Isolation vs. Temperature [1]
-20
-25
-30
-35
-40
-45
-50
4.5
4.9 5.3 5.7 6.1
FREQUENCY (GHz)
6.5
+25C
+85C
-40C
[1] Vdd = 5V, Rbias = 825Ω [2] Vdd = 3V, Rbias = 5.76kΩ
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
2





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