NP-Channel MOSFET. P5003QVG Datasheet

P5003QVG MOSFET. Datasheet pdf. Equivalent

Part P5003QVG
Description N&P-Channel MOSFET
Feature P5003QVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS = 1.
Manufacture UNIKC
Datasheet
Download P5003QVG Datasheet

P5003QVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMAR P5003QVG Datasheet
NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Trans P5003QVG Datasheet
Recommendation Recommendation Datasheet P5003QVG Datasheet





P5003QVG
P5003QVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
RDS(ON)
27.5mΩ @VGS = 10V
-30V
45mΩ @VGS = -10V
ID Channel
10A N
-7A P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30
VDS P -30
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current
TA = 25 °C
TA = 70 °C
N 10
P -7
ID N 7
P -5
Pulsed Drain Current1
N 20
IDM
P -20
Power Dissipation
TA = 25 °C
TA = 70 °C
N 2.5
P 2.5
PD N 1.6
P 1.6
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Duty cycle1%.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
50
30
UNITS
°C / W
°C / W
Ver 1.0
1 2013-4-18



P5003QVG
P5003QVG
N&P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
N 30
P -30
N 1 1.5 2.5
V
P -1 -1.5 -2.5
N ±100
nA
P ±100
N1
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
ID(ON)
RDS(ON)
gfs
VDS = -24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VDS = -20V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
VDS = -5V, VGS = -10V
VGS = 4.5V, ID = 6A
VGS = -4.5V, ID = -4A
VGS = 10V, ID = 7A
VGS = -10V, ID = -5A
VDS = 5V, ID = 7A
VDS = -5V, ID = -5A
P
N
P
N
P
N
P
N
P
N
P
-1
10
-10
20
-20
30 40
62 80
20.5 27.5
37.5 45
16
13
µA
A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Gate Resistance
DYNAMIC
N
Ciss
N-Channel
P
VGS = 0V, VDS = 15V, f = 1MHz N
Coss
P-Channel
P
Crss
VGS = 0V, VDS = -15V, f = 1MHz
N
P
N-Channel
N
Qg
VDS = 0.5*V(BR)DSS, VGS = 10V,
P
ID = 7A
N
Qgs
P-Channel
P
Qgd
VDS = 0.5*V(BR)DSS, VGS = -10V,
ID = -5A
N
P
N
Rg VGS=15mV,VDS=0V,f=1MHz
P
680
780
105
145
75
79
14
15.1
1.9
2.1
3.3
4.0
1.7 2.5
3.5 6
pF
nC
Ω
Ver 1.0
2 2013-4-18





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