P5003QVG

P5003QVG N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS = 10V -30V 45mΩ @VGS = -10V ID Channel 10A N -7A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70 °C N 10 P -7 ID N 7 P -5 Pulsed Drain Current1 N 20 IDM P -20 Power Dissipation TA = 25 °C TA = 70 °C N 2.5 P 2.5 PD N 1.6 P 1.6 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Duty cycle≤1%. SYMBOL RqJA RqJC TYPICAL MAXIMUM 50 30 UNITS °C / W °C / W Ver 1.0 1 2013-4-18 P5003QVG N&P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITION...