P5003QVT

P5003QVT N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 27.5mΩ @VGS =10V -30V 45mΩ @VGS = -10V ID Channel 10A N -7A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 Continuous Drain Current TA = 25 °C TA = 70°C N 10 P -7 ID N 7 P -5 Pulsed Drain Current1 N 20 IDM P -20 Power Dissipation TA = 25 °C TA = 70 °C N 2.5 P PD N 1.6 P Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A W °C REV 1.0 1 2014/9/30 P5003QVT N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 30 °C / W 50 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS CH. UNIT...