NP-Channel MOSFET. P5506NVG Datasheet

P5506NVG MOSFET. Datasheet pdf. Equivalent

Part P5506NVG
Description N&P-Channel MOSFET
Feature P5506NVG N- & P- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) NChannel PChan.
Manufacture UNIKC
Datasheet
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P5506NVG
P5506NVG
N- & P- Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
N-
Channel
P-
Channel
60 55mΩ @VGS = 10V
-60 80mΩ @VGS = 10V
ID
4.5A
-3.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
VDS
N- P-
Channel Channe
60 -60
Gate-Source Voltage
VGS ±20 ±20
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
4.5 -3.5
4 -3
Pulsed Drain Current1
IDM 20 -20
Avalanche Current
IAS 18 23
Avalanche Energy
L =0.1mH
EAS
16 26
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
62.5 °C / W
REV 1.1
1 2014/5/28



P5506NVG
P5506NVG
N- & P- Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP
STATIC
Drain-Source
Breakdown
Voltage
V(BR)DSS
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
N-Ch
P-Ch
60
-60
Gate Threshold
Voltage
Gate-Body
Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current1
Drain-Source On-
State Resistance1
Forward
Transconductance
1
Input Capacitance
Output
Capacitance
Reverse Transfer
Capacitance
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
Ciss
Coss
Crss
VDS = VGS, ID = 250mA
N-Ch
VDS = VGS, ID = -250mA
P-Ch
VDS = 0V, VGS = ±20V
N-Ch
VDS = 0V, VGS = ±20V
P-Ch
VDS =48V, VGS = 0V
N-Ch
VDS = -48V, VGS = 0V
P-Ch
VDS = 40V, VGS = 0V, TJ = 55 °C N-Ch
VDS =- 40V, VGS = 0V, TJ = 55 °C P-Ch
VDS = 5V, VGS = 10V
N-Ch
VDS =-5V, VGS = -10V
P-Ch
VGS = 4.5V, ID = 4A
N-Ch
VGS = -4.5V, ID = -3A
P-Ch
VGS = 10V, ID = 4.5A
N-Ch
VGS = -10V, ID = -3.5A
P-Ch
VDS = 10V, ID = 4.5A
VDS = -5V, ID = -3.5A
DYNAMIC
N-Ch
P-Ch
N-Channel
VGS = 0V, VDS = 25V, f = 1MHz
P-Channel
VGS = 0V, VDS = -30V, f = 1MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1
-1
20
-20
1.5
-1.5
55
74
42
60
14
9
650
760
80
90
35
40
UNITS
MAX
V
2.5
-2.5
±100
±100
1
-1
10
-10
nA
mA
A
75
100
55
80
S
pF
REV 1.1
2 2014/5/28





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