P-Channel MOSFET. P7004EV Datasheet

P7004EV MOSFET. Datasheet pdf. Equivalent

Part P7004EV
Description P-Channel MOSFET
Feature P7004EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 70mΩ @VGS = -10.
Manufacture UNIKC
Datasheet
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P7004EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P7004EV Datasheet
Recommendation Recommendation Datasheet P7004EV Datasheet





P7004EV
P7004EV
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
70mΩ @VGS = -10V
ID
-4A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-4
-3.2
-20
Avalanche Current
IAS -19
Avalanche Energy
L = 0.1mH
EAS
18
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.9
1.2
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
69 °C / W
Ver 1.0
1 2012/4/16



P7004EV
P7004EV
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250mA
-40
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250mA
-1.5 -2 -2.5
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 70 °C
-1
-10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = -10V, ID = -4A
43 70
Forward Transconductance1
gfs
VDS = -10V, ID = -4A
28
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = -20V, f = 1MHz
Reverse Transfer Capacitance
Crss
556
146
87
Gate Resistance
Rg VGS = 0V, f = 1MHz
8.6
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -4A
12
2.3
4.4
Turn-On Delay Time2
td(on)
12
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -20V,
ID@ -1A, VGS = -10V, RGS = 6Ω
10
44
Fall Time2
tf
8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -4A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -4A, dlF/dt = 100A / mS
15
7
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-1.4
-1.3
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16





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