P-Channel MOSFET. PV563BA Datasheet

PV563BA MOSFET. Datasheet pdf. Equivalent

Part PV563BA
Description P-Channel MOSFET
Feature PV563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10.
Manufacture UNIKC
Datasheet
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PV563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PV563BA Datasheet
Recommendation Recommendation Datasheet PV563BA Datasheet





PV563BA
PV563BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
15mΩ @VGS = -10V
ID
-9.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-9.5
-7.6
-40
Avalanche Current
IAS -32
Avalanche Energy
L=0.1mH
EAS
53
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
3
2
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
40
75
Junction-to-Case
Steady-State
RqJC
24
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.in a still air
environment with TA=25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.0
1 2016/12/20



PV563BA
PV563BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±25V
-40
-1.3 -1.5
-3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = -32V, VGS = 0V
VDS = -30V, VGS = 0V , TJ = 55 °C
-1
mA
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -9.5A
VGS = -10V, ID = -9.5A
VDS = -5V, ID = -9.5A
17 29
13 15
20 S
DYNAMIC
Input Capacitance
Ciss
1883
Output Capacitance
Coss
VGS = 0V, VDS = -20V, f = 1MHz
255 pF
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -20V
ID = -9.5A, VGS = -10V
VDD = -20V, ID @ -9.5A,
VGS = -10V,RGEN= 3Ω
213
4Ω
41.2
4.2 nC
14
9.4
20
nS
55
30
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -9.5A, VGS = 0V
-2.3 A
-1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -9.5A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
20 nS
6 nC
2Independent of operating temperature.
REV 1.0
2 2016/12/20





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