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PV563BA Dataheets PDF



Part Number PV563BA
Manufacturers UNIKC
Logo UNIKC
Description P-Channel MOSFET
Datasheet PV563BA DatasheetPV563BA Datasheet (PDF)

PV563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -9.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -9.5 -7.6 -40 Avalanche Current IAS -32 Avalanche Energy L=0.1mH EAS 53 Power Dissipation3 TA = 25 °C TA = 70 °C PD 3 2 J.

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PV563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -9.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -9.5 -7.6 -40 Avalanche Current IAS -32 Avalanche Energy L=0.1mH EAS 53 Power Dissipation3 TA = 25 °C TA = 70 °C PD 3 2 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 40 75 Junction-to-Case Steady-State RqJC 24 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper.in a still air environment with TA=25°C. 3The Power dissipation is .


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