NP-Channel MOSFET. PV601CA Datasheet

PV601CA MOSFET. Datasheet pdf. Equivalent

Part PV601CA
Description N&P-Channel MOSFET
Feature PV601CA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 22mΩ @VGS =10V .
Manufacture UNIKC
Datasheet
Download PV601CA Datasheet

PV601CA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PV601CA Datasheet
Recommendation Recommendation Datasheet PV601CA Datasheet





PV601CA
PV601CA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
RDS(ON)
22mΩ @VGS =10V
-30V
28mΩ @VGS = -10V
ID
7A
-6.4A
Channel
N
P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30
VDS P -30
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current
TA = 25 °C
TA = 70°C
N7
P -6.4
ID N 5.6
P -5.1
Pulsed Drain Current1
N 25
IDM P -23
Avalanche Current
N 12
IAS P -19.9
Avalanche Energy
L = 0.1mH
N 7.2
EAS P 19.8
Power Dissipation3
TA = 25 °C
TA = 70 °C
N
2
P
PD
N
1.3
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.2
1 2015/11/12



PV601CA
PV601CA
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
t 10s
RqJA
Steady-State
N-ch
60
77
Junction-to-Ambient2
t 10s
RqJA
Steady-State
P-ch
60
85
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH. UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 55 °C
VDS = -20V, VGS = 0V, TJ = 55 °C
N
P
N
P
N
P
N
P
N
P
30
-30
1 1.75 2.5
-1 -1.5 -2.5
±100
±100
1
-1
10
-10
V
nA
mA
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6A
VGS = -4.5V, ID = -5A
VGS = 10V, ID = 7A
VGS = -10V, ID = -6A
VDS = 10V, ID = 7A
VDS = -10V, ID = -6A
N
P
N
P
N
P
22 32
32 45
16 22
22 28
30
S
17
REV 1.2
2 2015/11/12





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