P-Channel MOSFET. PZ2003EV Datasheet

PZ2003EV MOSFET. Datasheet pdf. Equivalent

Part PZ2003EV
Description P-Channel MOSFET
Feature PZ2003EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20.
Manufacture UNIKC
Datasheet
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PZ2003EV P-Channel Logic Level Enhancement Mode MOSFET PROD PZ2003EV Datasheet
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PZ2003EV
PZ2003EV
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-8A
SOP- 8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-8
-6.5
-50
Avalanche Current
IAS -30
Avalanche Energy
L = 0.1mH
EAS
46
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
TYPICAL
MAXIMUM UNITS
60 °C / W
REV 1.1
1 2014/7/21



PZ2003EV
PZ2003EV
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
-30
-1 -1.6 -3
±30
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 70 °C
VDS = -5V, VGS = -10V
-50
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -7A
VGS = -10V, ID = -8A
VDS = -10V, ID = -8A
27 35
17 20
22
DYNAMIC
Input Capacitance
Ciss
1500
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
293
Reverse Transfer Capacitance
Crss
207
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V,
ID = -8A, VGS = -10V
VDS = -15V, ID @ -8A,
VGS = -10V, RGS = 6Ω
3.1
30
5
8
20
12
48
22
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -8A, VGS = 0V
-8
-1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -8A, dl/dt = 100A / ms
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
18
7
2Independent of operating temperature.
UNIT
V
mA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
2 2014/7/21





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