P-Channel MOSFET. PZ1203EV Datasheet

PZ1203EV MOSFET. Datasheet pdf. Equivalent

Part PZ1203EV
Description P-Channel MOSFET
Feature PZ1203EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12.
Manufacture UNIKC
Datasheet
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PZ1203EV
PZ1203EV
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
12mΩ @VGS = -10V
ID
-12A
SOP- 8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
-12
-9
-50
Avalanche Current
IAS -43
Avalanche Energy
L = 0.1mH
EAS
94
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.5
1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJc
RqJA
TYPICAL
MAXIMUM
25
50
UNITS
°C / W
REV 1.0
1 2014/9/17



PZ1203EV
PZ1203EV
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
-30
-1 -1.7 -3
±30
Zero Gate Voltage Drain Current
IDSS
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 125 °C
-1
-10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -9A
VGS = -10V, ID = -12A
VGS = -20V, ID = -12A
VDS = -10V, ID = -12A
14 21
9 12
7.5 10
28
DYNAMIC
Input Capacitance
Ciss
2510
Output Capacitance
Coss VGS = 0V, VDS = -15V, f = 1MHz
449
Reverse Transfer Capacitance
Crss
349
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS,
ID = -12A, VGS = -10V
VDS = -15V, ID @ -1A,
VGS = -10V, RGS = 6Ω
7.3
48
7
9
12
16
50
100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
-12
-1.2
2Independent of operating temperature.
UNITS
V
mA
mA
S
pF
Ω
nC
nS
A
V
REV 1.0
2 2014/9/17





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