P-Channel MOSFET. PB555BA Datasheet

PB555BA MOSFET. Datasheet pdf. Equivalent

Part PB555BA
Description P-Channel MOSFET
Feature PB555BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 25mΩ @VGS = -10.
Manufacture UNIKC
Datasheet
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PB555BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PB555BA Datasheet
Recommendation Recommendation Datasheet PB555BA Datasheet





PB555BA
PB555BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
25mΩ @VGS = -10V
ID
-8A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
-8
-6.4
30
Power Dissipation3
TA= 25 °C
TA= 70°C
PD
2.7
1.7
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
45
65
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe,in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.1
1 2015/9/24



PB555BA
PB555BA
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = -250mA
-30
VDS = VGS, ID = -250mA
-0.8 -1.7 -2.5
VDS = 0V, VGS = ±20V
±100
VDS = -24V, VGS = 0V
-1
VDS = -20V, VGS = 0V, TJ = 55°C
-10
V
nA
mA
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -10V, ID = -6A
VGS = -4.5V, ID = -6A
VDS = -5V, ID = -6A
18 25
29 40
22 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=-10V)
Qg(VGS=-4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V ,ID = -6A
VDD = -15V
ID @ -6A, VGEN = -10V, RG = 6Ω
920
133
115
13
20
10
2
5
16
18
40
26
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -6A, dlF/dt = 100A / mS
11
3.8
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-2.7
-1
A
V
nS
nC
REV 1.1
2 2015/9/24





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