N-Channel MOSFET. P5506BVG Datasheet

P5506BVG MOSFET. Datasheet pdf. Equivalent

Part P5506BVG
Description N-Channel MOSFET
Feature P5506BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS =10V .
Manufacture UNIKC
Datasheet
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P5506BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P5506BVG Datasheet
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P5506BVG
P5506BVG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 55mΩ @VGS =10V
ID
5.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Tc = 25 °C
Tc = 70 °C
ID
5.5
4.5
Pulsed Drain Current
IDM 20
Power Dissipation2
Tc = 25 °C
Tc = 70 °C
PD
2.5
1.3
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJC
RqJA
TYPICAL
17
37
MAXIMUM
25
50
UNITS
°C / W
Ver 1.0
1 2013-4-11



P5506BVG
P5506BVG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
V
1 1.5 2.5
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
20
1
mA
10
A
Drain-Source On-State Resistance1 RDS(ON)
Forward Transconductance1
gfs
VGS = 4.5V, ID = 4.5A
VGS = 10V, ID = 5.5A
VDS = 10V, ID = 5.5A
55 75
42 55
14 S
DYNAMIC
Input Capacitance
Ciss
650
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
80 pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS,
ID = 5.5A, VGS = 10V
VDD = 30V, ID @ 1A,
VGS = 10V, RGEN=6Ω
35
12.5 18
2.4
2.6
11 20
8 18
19 35
6 15
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
IF = 5.5A, VGS = 0V
1.3 A
1V
2Independent of operating temperature.
Ver 1.0
2 2013-4-11





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