P8008BVA

P8008BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 68mΩ @VGS = 10V ID 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 3.5 2.8 14 Avalanche Current IAS 14.7 Avalanche Energy L = 0.1mH EAS 10.8 Power Dissipation TA= 25 °C TA =70 °C PD 1.8 1.1 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Lead 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJL TYPICAL MAXIMUM 69 25 UNITS °C / W REV 1.0 1 2014/11/21 P8008BVA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Sou...