N-Channel MOSFET. P8008HV Datasheet

P8008HV MOSFET. Datasheet pdf. Equivalent

Part P8008HV
Description N-Channel MOSFET
Feature P8008HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
Download P8008HV Datasheet

P8008HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P8008HV Datasheet
P8008HVA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUM P8008HVA Datasheet
Recommendation Recommendation Datasheet P8008HV Datasheet





P8008HV
P8008HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 80mΩ @VGS = 10V
ID
4A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
4
3
20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.9
1.2
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Lead
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJL
TYPICAL
MAXIMUM
65
25
UNITS
°C / W
Ver 1.0
1 2012/4/16



P8008HV
P8008HV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
VDS = 64V, VGS = 0V
VDS = 64V, VGS = 0V , TJ = 70 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 1A
VGS = 10V, ID = 3A
VDS = 10V, ID = 4A
80
1.0 2.0 3.0
±100
1
10
20
70 90
60 80
7.5
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
1165 1400
104
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2 (10V)
Total Gate Charge2 (4.5V)
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 4A
VDS = 0.5V(BR)DSS, RL = 40Ω
ID @ 4A, VGS = 10V, RG = 3.3Ω
57
1.5
29.0
12.0
2.0
6.8
6.0
3.8
21.0
5.0
1.8
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD IF = 1A, VGS = 0V
1
4
20
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = Is, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
30
40
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)