P8008HV

P8008HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 80mΩ @VGS = 10V ID 4A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 4 3 20 Power Dissipation TA = 25 °C TA = 70 °C PD 1.9 1.2 Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Lead 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJL TYPICAL MAXIMUM 65 25 UNITS °C / W Ver 1.0 1 2012/4/16 P8008HV N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Th...