N-Channel MOSFET. P8010BV Datasheet

P8010BV MOSFET. Datasheet pdf. Equivalent

Part P8010BV
Description N-Channel MOSFET
Feature P8010BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
Download P8010BV Datasheet

P8010BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P8010BV Datasheet
Recommendation Recommendation Datasheet P8010BV Datasheet





P8010BV
P8010BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID
3.5A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
3.5
2.8
20
Avalanche Current
IAS 12
Avalanche Energy
L =0.1mH
EAS
7.2
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.4
1.5
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Case
RqJC
25
Junction-to-Ambient2
RqJA
52
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measureed with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA =25°C.The value in any given application depends on the user's specific board design.
UNITS
°C / W
Ver 1.0
1 2013-8-30



P8010BV
P8010BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
On-State Drain Current1
RDS(ON)
gfs
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 3A
VGS = 10V , ID = 3A
VDS = 10V, ID = 3A
VDS = 5V, VGS = 10V
100
1 1.8
3
V
±100 nA
1
mA
10
69 95
54 85
12 S
20 A
DYNAMIC
Input Capacitance
Ciss
532
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
69
Reverse Transfer Capacitance
Crss
31
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.6
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 50 V,
VGS = 10V, ID = 3A
13.8
2.2
5
Turn-On Delay Time2
td(on)
20
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,
ID @ 3A, VGS = 10V, RGEN = 6Ω
30
50
Fall Time2
tf
35
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 3A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 3A, dlF/dt = 100A / μS
29
27
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3.5
1.1
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2013-8-30





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)