MOSFET. PA210HVA Datasheet

PA210HVA MOSFET. Datasheet pdf. Equivalent

Part PA210HVA
Description MOSFET
Feature PA210HVA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 120mΩ @VG.
Manufacture UNIKC
Datasheet
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PA210HVA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUM PA210HVA Datasheet
Recommendation Recommendation Datasheet PA210HVA Datasheet





PA210HVA
PA210HVA
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
120mΩ @VGS = 10V
ID
2.3A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
2.3
1.8
20
Avalanche Current
IAS 6
Avalanche Energy
L= 1mH EAS 18
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.5
0.9
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient
RqJA
85
Junction-to-Case
RqJC
35
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014/11/24



PA210HVA
PA210HVA
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1.0 1.8 3.0
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 70 °C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 2A
VGS = 10V, ID = 2A
VDS = 10V, ID = 2A
82 130
78 120
10
DYNAMIC
Input Capacitance
Ciss
591
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
52
Reverse Transfer Capacitance
Crss
31
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.6
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V, ID = 2A
VDS = 50V,
ID @ 2A, VGS = 10V, RGEN = 6Ω
13.5
7.8
1.9
4.4
15
10
34
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 2A, VGS = 0V
1.2
1.2
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 2A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
19
14
2Independent of operating temperature.
UNITS
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2014/11/24





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