PC015HV

PC015HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 300mΩ @VGS = 10V ID 1.6A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 1.6 1.3 16 Avalanche Current IAS 6 Avalanche Energy L =0.1mH EAS 1.8 Power Dissipation TA = 25 °C TA= 70°C PD 1.8 1.1 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 70 1Pulse width limited by maximum junction temperature. 2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2014/12/3 PC015HV Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ =...