MOSFET. PC015HV Datasheet

PC015HV MOSFET. Datasheet pdf. Equivalent

Part PC015HV
Description MOSFET
Feature PC015HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 300mΩ @VGS.
Manufacture UNIKC
Datasheet
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PC015HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PC015HV Datasheet
Recommendation Recommendation Datasheet PC015HV Datasheet





PC015HV
PC015HV
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
300mΩ @VGS = 10V
ID
1.6A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
1.6
1.3
16
Avalanche Current
IAS 6
Avalanche Energy
L =0.1mH
EAS
1.8
Power Dissipation
TA = 25 °C
TA= 70°C
PD
1.8
1.1
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
70
1Pulse width limited by maximum junction temperature.
2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014/12/3



PC015HV
PC015HV
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
150
1
16
V
23
±100 nA
1
mA
10
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 1.6A
VGS = 4.5V, ID = 1.4A
208 300
235 450
Forward Transconductance1
gfs
VDS = 10V, ID = 1.6A
10 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
1010
50
40
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.2 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 1.6A
Qgd
22
3.2
8
Turn-On Delay Time2
td(on)
19
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 30V,
ID @ 1.6A, VGS = 10V, RGEN = 6Ω
42
78
Fall Time2
tf
53
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 1.6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 1.6A, dl/dt = 100A / mS
43.8
62
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.6
1.3
nC
nS
A
V
nS
uC
REV 1.0
2 2014/12/3





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