MOSFET. PD0903BV Datasheet

PD0903BV MOSFET. Datasheet pdf. Equivalent

Part PD0903BV
Description MOSFET
Feature PD0903BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.5mΩ @VGS = 10V.
Manufacture UNIKC
Datasheet
Download PD0903BV Datasheet

PD0903BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PD0903BV Datasheet
PD0903BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PD0903BVA Datasheet
Recommendation Recommendation Datasheet PD0903BV Datasheet





PD0903BV
PD0903BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.5mΩ @VGS = 10V
ID
15A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TA = 25 °C
TA = 70 °C
ID
IDM
IAS
15
12
80
33
Avalanche Energy
L =0.1mH
EAS
54
Power Dissipation
TA= 25 °C
TA =70 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
3.125
2
-55 to 150
UNITS
V
A
mJ
W
°C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Schottky
Reverse Current
VR = 45V IR 0.05
Forward Voltage
IF = 1A
VF 0.53
UNITS
mA
V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
t 10s
Junction-to-Ambient
Steady-State
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJA
TYPICAL
MAXIMUM
40
75
UNITS
°C / W
REV 1.0
1 2014/9/30



PD0903BV
PD0903BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
30
1
1.5 2.5
V
±100 nA
0.1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 15A
VGS = 10V, ID = 15A
VDS = 5V, ID = 15A
DYNAMIC
12 14.2
8 9.5
40 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V,VDS = 0V,f = 1MHz
1180
330
185
1.45
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS =15V, VGS = 10V,
ID = 15A
25
13
4
Gate-Drain Charge2
Qgd
7
Turn-On Delay Time2
td(on)
7
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 30V,
ID @ 15A,VGS = 10V, RGEN = 3Ω
10
22
Fall Time2
tf
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 1A, VGS = 0V
0.5
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 15A, dl/dt = 100A / mS
33.6
18
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3.125
0.7
nC
nS
A
V
nS
nC
REV 1.0
2 2014/9/30





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