PD0903BV

PD0903BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.5mΩ @VGS = 10V ID 15A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current TA = 25 °C TA = 70 °C ID IDM IAS 15 12 80 33 Avalanche Energy L =0.1mH EAS 54 Power Dissipation TA= 25 °C TA =70 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 3.125 2 -55 to 150 UNITS V A mJ W °C ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Schottky Reverse Current VR = 45V IR 0.05 Forward Voltage IF = 1A VF 0.53 UNITS mA V THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient t  10s Junction-to-Ambient Steady-State 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJA TYPICAL MAXIMUM 40 75 UNITS °C / W REV 1.0 1 2014/9/30 PD0903BV...