PD1303YVS

PD1303YVS Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 13mΩ @VGS =10V 30V 13mΩ @VGS =10V ID Channel 9A Q1 9A Q2 SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage Q1 30 VDS Q2 30 Gate-Source Voltage Q1 ±20 VGS Q2 ±20 Continuous Drain Current1 TA = 25 °C TA = 70°C Q1 9 Q2 9 ID Q1 7.2 Q2 7.2 Pulsed Drain Current1 Q1 21 IDM Q2 21 Avalanche Current Q1 25 IAS Q2 27 Avalanche Energy L = 0.1mH Q1 32 EAS Q2 36 Power Dissipation TA = 25 °C TA = 70 °C Q1 1.7 Q2 PD Q1 1.1 Q2 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C REV 1.0 1 2014/9/10 PD1303YVS Dual N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RqJA RqJA Q1 Q2 70 70 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device m...