MOSFET. PV6A4BA Datasheet

PV6A4BA MOSFET. Datasheet pdf. Equivalent

Part PV6A4BA
Description MOSFET
Feature PV6A4BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 14mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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PV6A4BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PV6A4BA Datasheet
Recommendation Recommendation Datasheet PV6A4BA Datasheet





PV6A4BA
PV6A4BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 14mΩ @VGS = 10V
ID
7.8A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
7.8
6.2
30
Avalanche Current
IAS 20
Avalanche Energy
L =0.1mH
EAS
20
Power Dissipation
TA= 25 °C
TA =70 °C
PD
1.8
1.1
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient
RqJA
69
Junction-to-Case
RqJC
25
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2016/12/20



PV6A4BA
PV6A4BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
40
1.3 1.7 2.3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 7.8A
VGS = 10V, ID = 7.8A
12 20
10 14
Forward Transconductance1
gfs
VDS = 5V, ID = 10A
50 S
DYNAMIC
Input Capacitance
Ciss
853
Output Capacitance
Coss VGS = 0V, VDS = 20V, f = 1MHz 105 pF
Reverse Transfer Capacitance
Crss
63
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
2.5
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 20V , ID = 7.8A
VDS = 20V,
ID @ 7.8A, VGS = 10V, RGEN = 6Ω
17
9
2.5
4.3
15
11
32
12
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 7.8A, VGS = 0V
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
Qrr
IF = 7.8A, dl/dt = 100A /mS
14
4.6
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
1.4
1.3
A
V
nS
nC
REV 1.0
2 2016/12/20





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