MOSFET. PZ2103NV Datasheet

PZ2103NV MOSFET. Datasheet pdf. Equivalent

Part PZ2103NV
Description MOSFET
Feature PZ2103NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 21mΩ @VGS = 10.
Manufacture UNIKC
Datasheet
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PZ2103NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMAR PZ2103NV Datasheet
Recommendation Recommendation Datasheet PZ2103NV Datasheet





PZ2103NV
PZ2103NV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 21mΩ @VGS = 10V
-30V
34mΩ @VGS = -10V
ID Channel
8A N
-6A P
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30
VDS P -30
Gate-Source Voltage
N ±20
VGS P ±20
Continuous Drain Current
TA = 25 °C
TA = 70 °C
N8
P -6
ID N 6
P -5
Pulsed Drain Current1
N 36
IDM P -27
Avalanche Current
N 20
IAS P -20
Avalanche Energy
L = 0.1mH
N 21
EAS P 21
Power Dissipation
TA = 25 °C
TA = 70 °C
N2
P2
PD N 1.3
P 1.3
Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec .)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
Ver 1.0
1 2012/4/16



PZ2103NV
PZ2103NV
N&P-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
40
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
VDS = 0V, VGS = ±16V
VDS = 0V, VGS = ±16V
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VDS = -20V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
VDS = -5V, VGS = -10V
VGS = 4.5V, ID = 6A
N
P
N
P
N
P
N
P
N
P
N
P
N
30
-30
1.0 1.5
-1.0 -1.5
36
-27
22
3.0
-3.0
±25
±25
1
-1
10
-10
31
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -4.5V, ID = -5A
VGS = 10V, ID = 7A
VGS = -10V, ID = -6A
VDS = 10V, ID = 5A
VDS = -10V, ID = -5A
P
N
P
N
P
35 56
16 21
21 34
14
8
UNIT
V
mA
mA
A
mΩ
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
DYNAMIC
N
Ciss
N-Channel
P
VGS = 0V, VDS = 15V, f = 1MHz N
Coss
P-Channel
P
Crss VGS = 0V, VDS = -15V, f = 1MHz N
P
520
1060
159
231
85
163
pF
Ver 1.0
2 2012/4/16





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