PZ2503HV

PZ2503HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 25mΩ @VGS = 10V ID 6.2A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±16 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 6.2 5 31 Avalanche Current IAS 17 Avalanche Energy L = 0.1mH EAS 18 Power Dissipation TA = 25 °C TA = 70 °C PD 1.5 1 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Lead 1Pulse width limited by maximum junction temperature. SYMBOL RqJA RqJL TYPICAL MAXIMUM 80 25 UNITS °C / W °C / W Ver 1.0 1 2012/4/16 PZ2503HV N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source...