PB6C4JY

PB6C4JY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 19.5mΩ @VGS = 4.5V ID 7.6A PDFN 2X5 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 7.6 6 25 Avalanche Current IAS 13 Avalanche Energy L = 0.1mH EAS 8.9 Power Dissipation TA = 25 °C TA = 70 °C PD 1.9 1.2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 65 Junction-to-Case RqJC 7 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2015/12/3 PB6C4JY Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERIST...