P1603BEB

P1603BEB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID3 21A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 21 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA= 70 °C ID IDM IAS 17 8 6 60 18 Avalanche Energy L = 0.1 mH EAS 16 TC = 25 °C 16 Power Dissipation TC = 100 °C TA= 25 °C TA= 70°C Operating Junction & Storage Temperature Range PD Tj, Tstg 10 2 1.2 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA Junction-to-Case RqJC 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. 3Package limitation current is 12A. MAXIMUM 65 7.6 UNITS °C / W REV 1.1 1 2014/7/...