MOSFET. PB5A2BA Datasheet

PB5A2BA MOSFET. Datasheet pdf. Equivalent

Part PB5A2BA
Description MOSFET
Feature PB5A2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 9mΩ @VGS = 4.5V .
Manufacture UNIKC
Datasheet
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PB5A2BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PB5A2BA Datasheet
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PB5A2BA
PB5A2BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 9mΩ @VGS = 4.5V
ID
11A
PDFN 2X2S
100% RG Test
100% UIL Test
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
11
9
33
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2
1.3
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
MAXIMUM
60
UNITS
°C / W
REV 1.0
1 2015/8/12



PB5A2BA
PB5A2BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 11A
VGS = 2.5V, ID = 9A
VGS = 1.8V , ID = 9A
VDS = 10V, ID = 18A
20
0.45 0.65 0.9
±100
1
10
6.5 9
7.9 11
10.5 15
93
V
nA
mA
S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 10V, f = 1MHz
1547
227
pF
Reverse Transfer Capacitance
Crss
203
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 2.4 Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=4.5V)
Qg(VGS=2.5V)
Qgs
VDS = 10V , ID = 11A
22
13 nC
1.1
Gate-Drain Charge2
Qgd
7.8
Turn-On Delay Time2
td(on)
25
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD= 10V,
ID @ 11A, VGEN = 4.5V, RG= 6Ω
20
62
nS
Fall Time2
tf
45
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
1.5 A
Forward Voltage1
VSD IF =11A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 11A, dlF/dt = 100A / mS
9.1 nS
2.2 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2015/8/12





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