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PB5G8JW Dataheets PDF



Part Number PB5G8JW
Manufacturers UNIKC
Logo UNIKC
Description MOSFET
Datasheet PB5G8JW DatasheetPB5G8JW Datasheet (PDF)

PB5G8JW Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 35mΩ @VGS = 4.5V ID 5A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 5 3.9 20 Power Dissipation TA = 25 °C TA = 70 °C PD 1.4 0.9 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150.

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PB5G8JW Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 35mΩ @VGS = 4.5V ID 5A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 5 3.9 20 Power Dissipation TA = 25 °C TA = 70 °C PD 1.4 0.9 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL Junction-to-Ambient2 RqJA 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. MAXIMUM 86 UNITS °C / W REV 1.0 1 2016/7/5 PB5G8JW Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC D.


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