MOSFET. PB5G8JW Datasheet

PB5G8JW MOSFET. Datasheet pdf. Equivalent

Part PB5G8JW
Description MOSFET
Feature PB5G8JW Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 35mΩ @VGS = .
Manufacture UNIKC
Datasheet
Download PB5G8JW Datasheet

PB5G8JW Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PB5G8JW Datasheet
Recommendation Recommendation Datasheet PB5G8JW Datasheet





PB5G8JW
PB5G8JW
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 35mΩ @VGS = 4.5V
ID
5A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
5
3.9
20
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.4
0.9
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
Junction-to-Ambient2
RqJA
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper.
MAXIMUM
86
UNITS
°C / W
REV 1.0 1 2016/7/5



PB5G8JW
PB5G8JW
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
20
V
VDS = VGS, ID = 250mA
0.5 0.7 1.0
VDS = 0V, VGS = ±8V
±10 nA
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 55 °C
1
mA
10
VGS = 4.5V, ID = 5A
22 35
VGS = 2.5V, ID = 4.5A
27 38
VGS = 1.8V , ID = 2A
35 55
VDS = 5V, ID = 5A
30 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss 506
Coss
VGS = 0V, VDS = 10V, f = 1MHz
82
pF
Reverse Transfer Capacitance
Crss
66
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 1.8 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=4.5V)
Qg(VGS=2.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10V , ID = 5A
VDD= 10V,
ID @ 5A, VGEN = 4.5V, RG= 6Ω
7
4.3 nC
0.6
2.3
12
35
nS
24
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
1.4 A
Forward Voltage1
VSD IF = 5A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / mS
8.8 nS
1.4 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0 2 2016/7/5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)