MOSFET. PB560DZ Datasheet

PB560DZ MOSFET. Datasheet pdf. Equivalent

Part PB560DZ
Description MOSFET
Feature PB560DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 26mΩ @VGS = .
Manufacture UNIKC
Datasheet
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PB560DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PB560DZ Datasheet
Recommendation Recommendation Datasheet PB560DZ Datasheet





PB560DZ
PB560DZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 26mΩ @VGS = 4.5V
ID
7.8A
PDFN 2X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA= 25 °C
TA = 70 °C
ID
IDM
7.8
6.2
40
Avalanche Current
IAS 10
Avalanche Energy3
EAS 4.9
Power Dissipation
TA = 25 °C
TA= 70 °C
PD
2.4
1.5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
52
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014-2-12



PB560DZ
PB560DZ
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
VDS = 16V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 125 °C
20
0.5 0.6
1
V
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 5A
VGS = 3.7V, ID = 4A
VGS = 2.5V, ID = 4A
19.2 26
20 31
23 33
DYNAMIC
Input Capacitance
Ciss
581
Output Capacitance
Coss VGS = 0V, VDS =10V, f = 1MHz
84
Reverse Transfer Capacitance
Crss
68
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VGS = 4.5 V,
VDS = 10V, ID = 5A
8.4
0.8
2.8
Turn-On Delay Time2
td(on)
11.5
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 10V,
ID @ 5A, VGS = 4.5V, RGS = 6Ω
17
30
Fall Time2
tf
9.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 5A, dlF/dt = 100A / μS
10
2.4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
2.4
1
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2014-2-12





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