MOSFET. P1203BE Datasheet

P1203BE MOSFET. Datasheet pdf. Equivalent

Part P1203BE
Description MOSFET
Feature P1203BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
Download P1203BE Datasheet

P1203BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1203BE Datasheet
P1203BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P1203BEA Datasheet
Recommendation Recommendation Datasheet P1203BE Datasheet





P1203BE
P1203BE
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mΩ @VGS = 10V
ID
9A
PDFN 3x3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
36
Continuous Drain Current
TC = 100 °C
TA = 25 °C
ID
22
9
Pulsed Drain Current1
TA = 70 °C
IDM
7
108
Avalanche Current
IAS 28
Avalanche Energy
L = 0.1mH
EAS
39
TC = 25 °C
25
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
10
1.6
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2016/12/18



P1203BE
P1203BE
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM UNITS
75
°C / W
3.6
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1.3 1.8 2.5
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 125 °C
VDS = 5V, VGS = 10V
108
1
mA
10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 11A
VDS = 10V, ID = 11A
13 17.5
9 12
22 S
DYNAMIC
Input Capacitance
Ciss
843
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
210 pF
Reverse Transfer Capacitance
Gate Resistance
Crss
Rg
VGS = 0V, VDS = 0V, f = 1MHz
115
2.1 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 11A
VDD = 15V,
ID @ 11A, VGEN = 10V, RG = 6Ω
17.3
9.2
nC
2.7
4.8
9.8
12.2
nS
9.7
11.7
REV 1.0
2 2016/12/18





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