MOSFET. P2003BEA Datasheet

P2003BEA MOSFET. Datasheet pdf. Equivalent

Part P2003BEA
Description MOSFET
Feature P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V .
Manufacture UNIKC
Datasheet
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P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2003BEA Datasheet
P2003BEAA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2003BEAA Datasheet
Recommendation Recommendation Datasheet P2003BEA Datasheet





P2003BEA
P2003BEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID
10A
PDFN 3x3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
VDS
VGS
30
±20
28
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
TC = 100 °C
TA = 25 °C
TA = 70 °C
L = 0.1mH
TC = 25 °C
ID
IDM
IAS
EAS
18
10
8
70
21.5
23
25
Power Dissipation
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD
TJ, TSTG
10
3.125
2
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.1 1 2014/8/5



P2003BEA
P2003BEA
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
t 10s
Junction-to-Ambient
Steady-State
Junction-to-Case
Steady-State
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJA
RqJC
TYPICAL MAXIMUM UNITS
40
75 °C / W
5
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
30
VDS = VGS, ID = 250mA
1 1.5 2.5
VDS = 0V, VGS = ±20V
±100
VDS = 24V, VGS = 0V
1
VDS = 20V, VGS = 0V , TJ = 55 °C
10
VDS = 5V, VGS = 10V
70
VGS = 4.5V, ID = 6A
23 31
VGS = 10V, ID = 8A
14 20
VDS = 10V, ID = 8A
13
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, ID = 8A
VDD = 15V,ID @ 8A,
VGEN = 10V, RG = 3Ω
484
169
106
1.75
10
4.4
2
3
5
4
16
3
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
REV 1.1 2 2014/8/5





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