PE532DY

PE532DY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 19mΩ @VGS = 10V ID3 21A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 21 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 13 7.5 Pulsed Drain Current1 TA= 70 °C IDM 6 25 Avalanche Current IAS 17 Avalanche Energy L =0.1mH EAS 15 TC = 25 °C 14 Power Dissipation TC = 100 °C TA = 25 °C PD 5 1.7 TA = 70 °C 1.1 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 70 Junction-to-Case RqJC 8.5 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package ...