MOSFET. PE606DT Datasheet

PE606DT MOSFET. Datasheet pdf. Equivalent

Part PE606DT
Description MOSFET
Feature PE606DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 11mΩ @VGS .
Manufacture UNIKC
Datasheet
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PE606DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PE606DT Datasheet
Recommendation Recommendation Datasheet PE606DT Datasheet





PE606DT
PE606DT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
Q2 30V
RDS(ON)
11mΩ @VGS = 10V
Q1 30V
16mΩ @VGS = 10V
ID
30A
23A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
30
17
40
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
9.4
7.5
Avalanche Current
IAS 17
Avalanche Energy
L = 0.1mH
EAS
14
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
19
7.6
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
1.8
1.1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
Q1
30
±20
23
14
32
7.3
5.8
12
7
16
6
1.6
1
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
RqJA
Q2
Q1
67
77
Junction-to-case
RqJC
RqJC
Q2
Q1
6.5
7.5
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
3Package limitation current is 11A.
UNITS
°C / W
REV 1.1
1 2015/11/12



PE606DT
PE606DT
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
Gate Threshold Voltage
VGS(th)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
Q2 30
Q1 30
Q2 1.3 1.75 2.3
Q1 1.3 1.75 2.3
V
Gate-Body Leakage
Q2
IGSS VDS = 0V, VGS = ±20V
Q1
±100
nA
±100
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VDS = 24V, VGS = 0V
VDS = 20V,
VGS = 0V ,TJ = 55 °C
VGS = 4.5V, ID = 9A
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 9A
VGS = 10V, ID = 7A
VDS = 5V, ID = 9A
VDS = 5V, ID = 7A
DYNAMIC
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
1
1
10
10
10.7 16
19.4 24
8.1 11
13 16
40
32
mA
S
Input Capacitance
Ciss
Q2 623
Q1 329
Output Capacitance
Coss
VGS = 0V, VDS = 15V,
f = 1MHz
Q2
Q1
124
70
pF
Reverse Transfer Capacitance
Crss
Q2 81
Q1 45
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
Q2
VDS = 15V , VGS = 10V,
ID = 9A
Q1
VDS = 15V , VGS = 10V,
ID = 7A
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
14.3
7.8
7.6
4.1
1.6
1.2
4.1
2.3
nC
REV 1.1
2 2015/11/12





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