PE618DT

PE618DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 7mΩ @VGS = 10V Q1 30V 16mΩ @VGS = 10V ID 39A 23A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 39 25 50 Continuous Drain Current TA = 25 °C TA = 70 °C ID 12 10 Avalanche Current IAS 23 Avalanche Energy L = 0.1mH EAS 26 Power Dissipation TC = 25 °C TC = 100 °C PD 20 8.3 Power Dissipation TA = 25 °C TA = 70 °C PD 2.2 1..4 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 Q1 30 ±20 23 14 32 7.3 5.8 12 7 16 6 1.6 1 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA RqJA Q2 Q1 56 77 Junction-to-case RqJC RqJC Q2 Q1 6 7.5 1Pulse width limited by maximum junction temper...