MOSFET. PE628HT Datasheet

PE628HT MOSFET. Datasheet pdf. Equivalent

Part PE628HT
Description MOSFET
Feature PE628HT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 7.5mΩ @VGS.
Manufacture UNIKC
Datasheet
Download PE628HT Datasheet

PE628HT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PE628HT Datasheet
Recommendation Recommendation Datasheet PE628HT Datasheet





PE628HT
PE628HT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
Q2 30V
RDS(ON)
7.5mΩ @VGS = 10V
Q1 30V
20mΩ @VGS = 10V
ID
39A
21A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
39
24
50
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
14
11
Avalanche Current
IAS 22
Avalanche Energy
L = 0.1mH
EAS
24
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
21
8.6
Power Dissipation4
TA = 25 °C
TA = 70 °C
PD
2.7
1.7
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
Q1
30
±20
21
13
32
8
6.5
12
7.2
16
6
2.5
1.6
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Q2 Max
Q1 Max
UNITS
Junction-to-Ambient2
t 10s
45 50
Steady-State
RqJA
55
77 °C / W
Junction-to-case
Steady-State
RqJC
5.8
7.5
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
3Package limitation current is Q2= 19A , Q1= 5.5A.
4The Power dissipation is based on RqJA t 10s value.
REV 1.1 1 2016/3/7



PE628HT
PE628HT
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
VGS = 0V, ID = 10mA
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
Q2 30
Q1 30
Q2 1.3 1.7 2.3
Q1 1.3 1.7 2.3
V
Gate-Body Leakage
Q2
IGSS VDS = 0V, VGS = ±20V
Q1
±100
nA
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V ,
TJ = 55 °C
Q2
Q1
Q2
Q1
0.5 mA
1 uA
5 mA
10 uA
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 10A
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 10A
VGS = 10V, ID = 8A
VDS = 5V, ID = 10A
VDS = 5V, ID = 8A
Q2
Q1
Q2
Q1
Q2
Q1
7 10.5
22 31
5.3 7.5
15.5 20
52
28
S
DYNAMIC
Input Capacitance
Ciss
Q2 1075
Q1 323
Output Capacitance
Coss
VGS = 0V, VDS = 15V,
f = 1MHz
Q2
Q1
215
71
pF
Reverse Transfer Capacitance
Crss
Q2 155
Q1 47
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
Q2
VDS = 15V , VGS = 10V,
ID = 10A
Q1
VDS = 15V , VGS = 10V,
ID = 8A
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
20
7.7
11
4.2
2.4
1.3
5.8
2.2
nC
REV 1.1 2 2016/3/7





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