P0502CEA

P0502CEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 5mΩ @VGS = 4.5V ID 70A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TC = 25 °C 70 Continuous Drain Current1,2 TC = 100 °C TA = 25 °C ID 44 17 Pulsed Drain Current1 TA = 70 °C IDM 13 150 Avalanche Current IAS 58 Avalanche Energy L = 0.1mH EAS 173 TC = 25 °C 40 Power Dissipation TC = 100 °C TA = 25 °C PD 16 2.3 TA = 70 °C 1.4 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C REV1.0 1 2014/6/16 P0502CEA N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RqJA 54 Junction-to-Case RqJC 3.1 1Pulse width limited by maximum junction temperature. 2Package limitation current is 38A. 3The value of RqJA is measured with the d...