P0903BEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID 48A
PDFN 3x3P
A...
P0903BEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID 48A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
48
Continuous Drain Current2
TC = 100 °C TA = 25 °C
ID
30 13
Pulsed Drain Current1
TA = 70 °C
IDM
10 130
Avalanche Current
IAS 30
Avalanche Energy
L = 0.1mH
EAS
45
TC = 25 °C
33
Power Dissipation
TC = 100 °C TA = 25 °C
PD
13 2.3
TA = 70 °C
1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
Ver 1.0
1 2012/9/4
P0903BEA
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM UNITS
Junction-to-Ambient3
RqJA
55
Junction-to-Case
RqJC
3.7
1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
3The value of R
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