P2003EEA

P2003EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -28A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±25 TC = 25 °C -28 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA = 70 °C ID IDM IAS -18 -10 -8 -70 -30 Avalanche Energy L = 0.1mH EAS 44 TC = 25 °C 25 Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, TSTG 10 3.125 2 -55 to 150 UNITS V A mJ W °C REV1.1 1 2014/6/9 P2003EEA P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case t ≦10s Junction-to-Ambient Steady-State Junction-to-Ambient Steady-State 1Pulse width limited by maximum junction temperature. 2Package limitation current is 22A. SYMBOL RqJA ...