MOSFET. P2503HEA Datasheet

P2503HEA MOSFET. Datasheet pdf. Equivalent

Part P2503HEA
Description MOSFET
Feature P2503HEA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS =.
Manufacture UNIKC
Datasheet
Download P2503HEA Datasheet

P2503HEA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUM P2503HEA Datasheet
Recommendation Recommendation Datasheet P2503HEA Datasheet





P2503HEA
P2503HEA
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID
8A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
ID
IDM
8
6
60
Avalanche Current
IAS 17
Avalanche Energy
L = 0.1mH
EAS
14
Power Dissipation
TA = 25 °C
TA = 70 °C
PD
2.2
1.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
RqJA
56
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air
environment with TA=25°C.
°C / W
REV 1.1
1 2015/7/10



P2503HEA
P2503HEA
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1 1.5 2.5
V
±100 nA
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
60
1
mA
10
A
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 8A
VDS = 10V, ID = 8A
25 30
17 20
21 S
DYNAMIC
Input Capacitance
Ciss
588
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz 77 pF
Reverse Transfer Capacitance
Crss
67
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 3.7 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, ID = 8A
VDD = 15V,
ID @ 8A, VGEN = 10V, RG = 6Ω
12.7
6.6
nC
3.3
2.4
12
10
nS
27
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 8A, dlF/dt = 100A / mS
12.5
3.2
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
8
1.4
A
V
nS
nC
REV 1.1
2 2015/7/10





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