P2503HEA

P2503HEA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 8A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 8 6 60 Avalanche Current IAS 17 Avalanche Energy L = 0.1mH EAS 14 Power Dissipation TA = 25 °C TA = 70 °C PD 2.2 1.4 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RqJA 56 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.Copper, in a still air environment with TA=25°C. °C / W REV 1.1 1 2015/7/10 P2503HEA Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS...