PE504BA

PE504BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10mΩ @VGS = 10V ID 31A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 Avalanche Current Tc = 25 °C Tc = 100 °C TA = 25 °C TA= 70 °C ID IDM IAS 31 20 12 9 70 26 Avalanche Energy EAS 33 TC = 25 °C Power Dissipation TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range PD TJ, Tstg 17 7 2.3 1.5 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 7.5 Junction-to-Ambient2 RqJA 55 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. UNITS °C / W REV 1.0 1 2014-3-3 PE504BA N-Channel Enhancement Mode...