MOSFET. PE532DX Datasheet

PE532DX MOSFET. Datasheet pdf. Equivalent

Part PE532DX
Description MOSFET
Feature PE532DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 19mΩ @VGS = .
Manufacture UNIKC
Datasheet
Download PE532DX Datasheet

PE532DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PE532DX Datasheet
Recommendation Recommendation Datasheet PE532DX Datasheet





PE532DX
PE532DX
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 19mΩ @VGS = 10V
ID3
21A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC= 25 °C
21
Continuous Drain Current3
TC = 100 °C
TA = 25 °C
ID
13
7.5
Pulsed Drain Current1
TA= 70 °C
IDM
6
25
Avalanche Current
IAS 17
Avalanche Energy
L = 0.1mH
EAS
15
TC= 25 °C
14
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
5
1.7
TA= 70°C
1.1
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
8.5
Junction-to-Ambient2
RqJA
70
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 9A.
UNITS
°C / W
REV 1.0
1 2016/12/19



PE532DX
PE532DX
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55°C
VDS = 5V, VGS = 10V
30
1
25
1.5 2.5
V
±100 nA
1
mA
10
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 6.8A
VGS = 10V, ID = 7.5A
19.8 25
16.8 19
Forward Transconductance1
gfs
VDS = 10V, ID = 7.5A
22 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
520
70
pF
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Rg
Qg(VGS = 4.5V)
Qg(VGS = 10V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 15V,ID = 7.5A
VDD = 15V,
ID @ 7.5A, VGEN = 10V, RG = 6Ω
61
2.2
7.8
14
2
3.6
14
10
30
10
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
21 A
Forward Voltage1
VSD IF = 7.5A, VGS = 0V
1V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 7.5A, dlF/dt = 100A / mS
12 nS
3 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 9A.
REV 1.0
2 2016/12/19





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