MOSFET. PE534BA Datasheet

PE534BA MOSFET. Datasheet pdf. Equivalent

Part PE534BA
Description MOSFET
Feature PE534BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9mΩ @VGS = 10V I.
Manufacture UNIKC
Datasheet
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PE534BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PE534BA Datasheet
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PE534BA
PE534BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9mΩ @VGS = 10V
ID
31A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Tc = 25 °C
31
Continuous Drain Current2
Tc = 100 °C
TA = 25 °C
ID
20
10
Pulsed Drain Current1
TA= 70 °C
IDM
8
50
Avalanche Current
IAS 24.5
Avalanche Energy
L =0.1mH
EAS
30
TC = 25 °C
15
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
6
1.6
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient3
RqJA
75
Junction-to-Case
RqJC
8
1Pulse width limited by maximum junction temperature.
2Package limitation current is 18A.
3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2014-2-28



PE534BA
PE534BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
30
1.35 1.8
3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
1
mA
10
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 10A
9.3 14
7.3 9
VDS = 5V, ID = 10A
65 S
DYNAMIC
Input Capacitance
Ciss
900
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz 140 pF
Reverse Transfer Capacitance
Crss
110
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 1.7 Ω
Total Gate Charge2
Gate-Source Charge2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
VDS = 15V , ID = 10A
22
11.7
2.8
Gate-Drain Charge2
Qgd
6.3
Turn-On Delay Time2
td(on)
18
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD= 15V,
ID @ 10A, VGEN = 10V, RG= 6Ω
10
33
Fall Time2
tf
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF =10A, dlF/dt = 100A / μS
17
6.6
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 18A.
12.5
1.2
nC
nS
A
V
nS
nC
REV 1.0
2 2014-2-28





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