PE534SA

PE534SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 7.5mΩ @VGS = 10V ID 52A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 52 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 33 14 Pulsed Drain Current1 TA= 70 °C IDM 11 100 Avalanche Current IAS 22 Avalanche Energy L =0.1mH EAS 24 TC = 25 °C 36 Power Dissipation TC = 100 °C TA = 25 °C PD 14 2.5 TA = 70 °C 1.6 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 50 Junction-to-Case RqJC 3.5 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.The value in...