PE529BA

PE529BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 9.5mΩ @VGS = -4.5V ID -34A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Tc = 25 °C -34 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID -21 -12 Pulsed Drain Current1 TA= 70 °C IDM -9.8 -100 Avalanche Current IAS -39 Avalanche Energy L =0.1mH EAS 76 TC = 25 °C 17.8 Power Dissipation TC = 100 °C TA = 25 °C PD 7 2.3 TA = 70 °C 1.5 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 54 Junction-to-Case RqJC 7 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. ...