MOSFET. PE551BA Datasheet

PE551BA MOSFET. Datasheet pdf. Equivalent

Part PE551BA
Description MOSFET
Feature PE551BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20m.
Manufacture UNIKC
Datasheet
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PE551BA P-Channel Logic Level Enhancement Mode MOSFET PRODU PE551BA Datasheet
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PE551BA
PE551BA
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-30V
20mΩ @VGS = -10V
ID
-22A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±25
TC = 25 °C
-22
Continuous Drain Current3
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
TC = 100 °C
TA = 25 °C
TA = 70 °C
L = 0.1mH
ID
IDM
IAS
EAS
-14
-7
-5.8
-40
-23
26
TC = 25 °C
17
Power Dissipation
Junction & Storage Temperature Range
TC = 100 °C
TA = 25 °C
TA = 70 °C
PD
TJ, TSTG
7
1.9
1.2
-55 to 150
UNITS
V
A
mJ
W
°C
REV1.0
1 2016/6/22



PE551BA
PE551BA
P-Channel Logic Level Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
65
Junction-to-Case
RqJC
7.2
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C.
3Package limitation current is -21A.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 0V, ID = -250mA
VDS = VGS, ID = -250mA
-30
-1 -1.6
-3
V
VDS = 0V, VGS = ±25V
±100 nA
VDS = -24V, VGS = 0V
VDS = -20V, VGS = 0V , TJ = 55 °C
-1
mA
-10
VGS = -10V, ID = -7A
VGS = -4.5V, ID = -7A
15 20
23 30
VDS = -10V, ID = -7A
25 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS=-10V)
Qg(VGS=-4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = -15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = -15V, ID = -7A
VDD = -15V,
ID @ -7A, VGS = -10V, RGEN = 6Ω
1009
154
121
8
21
11
3
6
22
16
50
25
pF
Ω
nC
nS
REV1.0
2 2016/6/22





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