PE5A1BA

PE5A1BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -20V 6.5mΩ @VGS = -4.5V ID -43A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±8 TC = 25 °C -43 Continuous Drain Current4 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA = 70 °C ID IDM IAS -27 -18 -14 -50 -39 Avalanche Energy L = 0.1mH EAS 76 TC = 25 °C 20 Power Dissipation3 Junction & Storage Temperature Range TC = 100 °C TA = 25 °C TA = 70 °C PD TJ, TSTG 8 3.5 2.2 -55 to 150 UNITS V A mJ W °C REV1.1 1 2015/10/14 PE5A1BA P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s Steady-State RqJA RqJA 35 60 Junction-to-Case Steady-State RqJC 6 1Pulse width limited by maximum junction temperature. 2The v...