MOSFET. PE5E6BA Datasheet

PE5E6BA MOSFET. Datasheet pdf. Equivalent

Part PE5E6BA
Description MOSFET
Feature PE5E6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V I.
Manufacture UNIKC
Datasheet
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PE5E6BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY PE5E6BA Datasheet
Recommendation Recommendation Datasheet PE5E6BA Datasheet





PE5E6BA
PE5E6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID
39A
PDFN 3X3P
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current4
Pulsed Drain Current1
Tc = 25 °C
Tc = 100 °C
ID
IDM
39
25
100
Continuous Drain Current4
TA = 25 °C
TA = 70 °C
ID
16
13
Avalanche Current
IAS 33
Avalanche Energy
L =0.1mH
EAS
54
Power Dissipation
Power Dissipation3
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
PD
17.8
7
3
2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
t 10s
RqJA
40
Junction-to-Ambient2
Steady-State
RqJA
60
Junction-to-Case
Steady-State
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
4Package limitation current is 13A.
UNITS
°C / W
REV 1.0
1 2016/12/22



PE5E6BA
PE5E6BA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250mA
30
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
1.3 2
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 8.8A
VGS = 10V, ID = 11A
VDS = 5V, ID = 11A
6
4
36
DYNAMIC
Input Capacitance
Ciss
1004
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz
324
Reverse Transfer Capacitance
Crss
190
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V , VGS = 10V,
ID = 11A
VDS= 15V, ID @ 11A,
VGS = 10V, RGEN= 6Ω
23
13
2.4
7.9
24
25
50
22
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 11A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 11A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
21
7.2
2Independent of operating temperature.
3Package limitation current is 13A.
2.3
±100
1
10
9
6
15
1.2
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2016/12/22





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