PE610SA

PE610SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3mΩ @VGS = 10V ID 62A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 62 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 39 24 Pulsed Drain Current1 TA= 70 °C IDM 19 100 Avalanche Current IAS 34 Avalanche Energy L =0.1mH EAS 57.8 TC = 25 °C 20 Power Dissipation4 TC = 100 °C TA = 25 °C PD 8 3 TA = 70 °C 2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t≦10s Steady-State RqJA RqJA 40 60 Junction-to-Case Steady-State RqJC 6 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air en...