PE614DX

PE614DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 12.5mΩ @VGS = 4.5V ID 30A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±10 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation TC= 25 °C TC = 100 °C TA = 25 °C TA= 70 °C L = 0.1mH TC= 25 °C TC = 100 °C TA = 25 °C TA= 70°C ID IDM IAS EAS PD 30 19 11 9 80 22 24 17.8 7 2.5 1.6 ESD Class HBM 2kV Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RqJC 7 Junction-to-Ambient2 RqJA 50 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3Package limitation current is 7A. UNI...