MOSFET. PE614DX Datasheet

PE614DX MOSFET. Datasheet pdf. Equivalent

Part PE614DX
Description MOSFET
Feature PE614DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 12.5mΩ @VGS .
Manufacture UNIKC
Datasheet
Download PE614DX Datasheet

PE614DX Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMM PE614DX Datasheet
Recommendation Recommendation Datasheet PE614DX Datasheet





PE614DX
PE614DX
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 12.5mΩ @VGS = 4.5V
ID
30A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±10
Continuous Drain Current3
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
TC= 25 °C
TC = 100 °C
TA = 25 °C
TA= 70 °C
L = 0.1mH
TC= 25 °C
TC = 100 °C
TA = 25 °C
TA= 70°C
ID
IDM
IAS
EAS
PD
30
19
11
9
80
22
24
17.8
7
2.5
1.6
ESD Class
HBM
2kV
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Case
RqJC
7
Junction-to-Ambient2
RqJA
50
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 7A.
UNITS
°C / W
REV 1.2
1 2014/6/24



PE614DX
PE614DX
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±8V
VDS =16V, VGS = 0V
VDS =10V, VGS = 0V, TJ = 125°C
20
0.35
0.67
1
30
1
10
V
mA
VGS =4.5V, ID =3A
8.5 10 12.5
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 3.9V, ID = 3A
VGS = 2.5V, ID = 3A
8.7 10.2 13.7
10 11.5 15
VGS = 1.8V, ID = 3A
12.7 14.2
Forward Transconductance1
gfs
VDS = 5V, ID = 3A
35
DYNAMIC
Input Capacitance
Ciss
1105
Output Capacitance
Coss VGS = 0V, VDS = 10V, f = 1MHz
198
Reverse Transfer Capacitance
Crss
169
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS = 4.5V)
Qg(VGS = 3.9V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =10V,ID = 3A
VDD = 10V,
ID @ 3A, VGS = 4.5V, RGEN = 6Ω
17
15
1.4
5
22
34
51
17
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 3A, VGS = 0V
Reverse Recovery Time
trr IF = 3A, dlF/dt = 100A / μS,
14
Reverse Recovery Charge
Qrr
VGS = 0V
5.4
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
3Package limitation current is 7A.
20.2
14.8
1.2
S
pF
nC
nS
A
V
nS
nC
REV 1.2
2 2014/6/24





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