PE628BA

PE628BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 14mΩ @VGS = 10V ID3 27A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 27 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 17 8 Pulsed Drain Current1 TA = 70 °C IDM 6 66 Avalanche Current IAS 14.7 Avalanche Energy L =0.1mH EAS 10.8 TC = 25 °C 18 Power Dissipation TC = 100 °C TA = 25 °C PD 7 1.7 TA = 70 °C 1.1 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C REV 1.0 1 2016/12/23 PE628BA N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 71.5 Junction-to-Case RqJC 6.8 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with ...