PE632BA

PE632BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.5mΩ @VGS = 10V ID 53A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 53 Continuous Drain Current2 Tc = 100 °C TA = 25 °C ID 33 15 Pulsed Drain Current1 TA= 70 °C IDM 12 100 Avalanche Current IAS 37.5 Avalanche Energy L =0.1mH EAS 70 TC = 25 °C 22.7 Power Dissipation TC = 100 °C TA = 25 °C PD 9 2 TA = 70 °C 1.3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient3 RqJA 63 Junction-to-Case RqJC 5.5 1Pulse width limited by maximum junction temperature. 2Package limitation current is 23A. 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air env...